High resolution, multi-layer resist for microlithography and met

Details High resolution, multi-layer resist for microlithography and met High resolution, multi-layer resist for microlithography and met

1992-06-08

1994-05-24

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Imaged product

Multilayer

430 9, 430270, 430313, 430316, 430317, G03C 300, G03C 500, G03F 726

Patent

active

053147723

ABSTRACT:
A high resolution, multi-layer resist for use in microlithography and a method is disclosed. The resist consists of a planarized layer deposited onto a substrate and an active layer, consisting of arsenic sulfide and silver is deposited onto the planarized layer. Irradiation with light, or other source of irradiation causes the silver to ionically diffuse into the arsenic sulfide, thereby creating a non-phase separate ternary chalcogenide glass. Removal of either the reacted or unreacted ternary compound will provide a positive or negative mask which may be used in subsequent processing or left as an intermetal dielectric as part of the underlying circuitry.

REFERENCES:
patent: 4269935 (1981-05-01), Masters
patent: 4316946 (1982-02-01), Masters
patent: 4371608 (1983-02-01), Das
Bernstein, G. H., et al., "High Resolution Electron Beam Lithography with Negative Organic and Inorganic Reists", J. Vac. Sci. Technol. B 6 (6), Nov./Dec., 1988 pp. 2298-2302.

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