High resolution lithographic process

Radiation imagery chemistry: process – composition – or product th – Registration or layout process other than color proofing

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430 5, 430311, 430966, 430967, G03F 900, G03F 100, G03F 726

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active

045579865

ABSTRACT:
A lithographic process utilizing soft x-rays or ions to achieve high resolution is disclosed. The process is particularly useful and semiconductor processing where high resolution is required to achieve a high density. The process utilizes a mask to selectively expose a photoresist to soft x-rays or flood beams of ions. The mask comprises a thin metallic foil supported by a frame such that the foil is in tension. The frame includes optical alignment keys. A second patterned layer of metal is affixed to the foil to form areas which are nontransparent to the soft x-rays or flood ion beams for delineating the elements of a semiconductor circuit, for example. This permits the mask to be optically aligned using conventionally techniques with high resolution being achieved do to the short wavelength of the x-ray radiation or the ion beams.

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patent: 4454209 (1984-06-01), Blais
Parrens, P. et al., J. Vac. Sci. Tech., vol. 16(6), 11/1979, pp. 1965-1967.
Spiller et al., Solid State Technology, 4/1976, pp. 62-67.
Tischer, P., Eurocon '80, "Advances in X-Ray Lithography", 3/1980, pp. 46-51.
Gordon, E., et al., IEEE Transactions on Electron Devices, vol. ED-221, No. 7, 7/1975, pp. 371-375.
Anon, Electronics, 10/17/77, pp. 134-136.
Maydan, et al., IEEE Transactions on Electron Devices, vol. ED, No. 7, 7/1975, pp. 429-433.
Anon, Electronics, 8/31/78, pp. 117-121.

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