High-resolution light-sensing and light-emitting diode array and

Details High-resolution light-sensing and light-emitting diode array and High-resolution light-sensing and light-emitting diode array and

1998-08-20

2000-10-24

Mulpuri, Savitri

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Dopant introduction into semiconductor region

438569, 438462, H01L 21225

Patent

active

061366277

ABSTRACT:
A light-sensing/emitting diode array chip has impurity diffusion regions with a depth of at least 0.5 .mu.m but not more than 2 .mu.m in a semiconductor substrate. Each impurity diffusion region is preferably divided into a first region, used for emitting or sensing light, and a wider second region, used for electrode contact. The second regions are located on alternate sides of the array line, permitting a small array pitch to be combined with a large contact area. In a wafer process for fabrication of the chips, a diffusion mask has both windows defining the impurity diffusion regions, and dicing line marks. The dicing line marks are narrowed where they pass adjacent to the windows at the ends of the chip. In the electrode fabrication step, a photomask with an enlarged pattern is used, to allow for misalignment with the diffusion mask.

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