High resolution image sensor array using amorphous photo-diodes

Details High resolution image sensor array using amorphous photo-diodes High resolution image sensor array using amorphous photo-diodes

1985-03-12

1988-07-19

Westin, Edward P.

Radiant energy

Photocells; circuits and apparatus

Optical or pre-photocell system

250211R, 357 30, 35821311, 35821328, H01L 2714, H04N 530

Patent

active

047587342

ABSTRACT:
An image sensor array comprises an insulating substrate, a plurality of individual electrodes formed on the substrate, a plurality of blocking diodes formed on the respective individual electrodes, a plurality of photo diodes formed on the blocking diodes to form a plurality of series connections of a blocking diode and a photo diode, a plural number of common electrodes of a transparent conductor material, each of the common electrodes covering one of the photo diodes on the same individual electrodes, and a filter covering portions of the common electrodes above the photo diodes. A photo-shielding layer of metal, amorphous silicon, amorphous germanium or amorphous silicon germanium may be interposed between the blocking diode and the photo diode.

REFERENCES:
patent: 4499384 (1985-02-01), Segawa et al.
patent: 4542409 (1985-09-01), Ochi
patent: 4556800 (1985-12-01), Ohta et al.
patent: 4565928 (1986-01-01), Yamamoto et al.
patent: 4584607 (1986-04-01), Miyazawa
Yamamoto et al., High Speed Contact Type Linear Sensor Array Using a-Si Pin Diodes, Extended Absts. of the 15th Conf. on Solid State Devices & Materials, 1983, pp. 205-208.

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