High resolution AC silicon MOS light-valve substrate

Details High resolution AC silicon MOS light-valve substrate High resolution AC silicon MOS light-valve substrate

1979-11-30

1980-12-16

Bauer, Edward S.

350334, 350339R, 357 24, G02F 1135

Patent

active

042393485

ABSTRACT:
There is disclosed a single crystal silicon charge storage apparatus suitable for use in an alternating current driven liquid crystal light valve having therein a moderately doped microchannel stop grid. The charge storage medium is made of a high resistivity substrate on which an MOS capacitor is formed having fast photoelectric transient response and capable of operating over a wide frequency range. A doped microgrid structure is formed in one side of the substrate to prevent charge carrier spreading at the silicon-silicon dioxide interface and to provide a focusing electric field for the charge carriers. The signal from the substrate is electrically coupled through high-reflectivity mirrors and light blocking layers to the liquid crystal.

REFERENCES:
patent: 4093357 (1978-06-01), Jacobson et al.

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