High resistivity thin film composition and fabrication method

Details High resistivity thin film composition and fabrication method High resistivity thin film composition and fabrication method

2006-12-08

2009-10-27

Lee, Kyung (Department: 2833)

Electrical resistors

With base extending along resistance element

Resistance element coated on base

C338S309000, C029S610100

Reexamination Certificate

active

07609144

ABSTRACT:
A thin film composition is made from silicon, an insulator such as alumina or silicon dioxide, and at least one additional material such as chromium, nickel, boron and/or carbon. These materials are combined to provide a thin film having a ρ of at least 0.02 Ω-cm (typically 0.02-1.0 Ω-cm), and a TCR of less than ±1000 ppm/° C. (typically less than ±300 ppm/° C.). A sheet resistance of at least 20 kΩ/□ may also be obtained. The resulting thin film is preferably at least 200thick, to reduce surface scattering conduction currents.

REFERENCES:
patent: 4391846 (1983-07-01), Raymond
patent: 6129742 (2000-10-01), Wu et al.
patent: 6420826 (2002-07-01), Jankowski et al.
Jankowski, A.F. et al.; “TI-CR-AL-O Thin Film Resistors”: UCRL-JC-147866; U.S. Department of Energy; University of California; Lawrence Livermore National Laboratory; Mar. 21, 2002; pp. 1-18.

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