High resistivity SiC material with B, N and O as the only...

Details High resistivity SiC material with B, N and O as the only... High resistivity SiC material with B, N and O as the only...

2011-08-02

2011-08-02

Group, Karl E (Department: 1731)

Compositions: ceramic

Ceramic compositions

Carbide or oxycarbide containing

C501S092000

Reexamination Certificate

active

07989380

ABSTRACT:
A dense silicon carbide (SiC) material with boron (B), nitrogen (N) and oxygen (O) as the only additives and with excellent insulting performance (electrical volume resistivity greater than 1×108Ω·cm). The SiC ceramic material, made from a powder mix of, by weight, from 0.1 to 7% boron carbide, from 0.1 to 7% silicon nitride, from 0.1 to 6% silicon dioxide, and a balance of α-SiC, consists essentially of (1) at least 90% by weight of α-SiC, (2) about 0.3 to 4.0% by weight of boron, (3) about 0.1 to 6.0% by weight of nitrogen, (4) about 0.06 to 0.5% by weight of oxygen, and (5) no more than 0.07% by weight of metallic impurities; wherein the boron and nitrogen are present according to an B/N atomic ratio of 0.9 to 1.5. In particular, this material is suitable for applications in plasma etching chambers for semiconductor and integrated circuit manufacturing.

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