High resistivity group III-V compounds by helium bombardment

Details High resistivity group III-V compounds by helium bombardment High resistivity group III-V compounds by helium bombardment

1983-05-31

1986-11-04

Buczinski, S. C.

Coherent light generators

Particular component circuitry

Optical pumping

357 91, 357 17, 372 46, 29576B, H01L 2702, H01L 2100

Patent

active

H00001473

ABSTRACT:
Helium-3 and helium-4 bombardment of InP over a fluence range of 10.sup.11 to 10.sup.16 ions/cm.sup.2 reproducibly forms highly resistive regions in both p-type and n-type single crystal material. Average peak resistivities are about 10.sup.9 ohm-cm for p-type InP and are about 10.sup.3 ohm-cm for n-type InP. High resistivity has also been produced in GaP, GaSb, GaAs, and InGaAs by helium bombardment. Stripe geometry lasers and planar photodiodes which incorporate helium-bombarded zones are described.

REFERENCES:
patent: 3912556 (1975-10-01), Grenon et al.
patent: 4355396 (1982-10-01), Hawrylo et a l.
patent: 4447905 (1984-05-01), Dixon et al.

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