High resistivity FeXN sputtered films for magnetic storage...

Stock material or miscellaneous articles – Composite – Of inorganic material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C428S690000, C428S690000, C428S690000, C428S690000, C428S900000, C204S192200, C360S125330

Reexamination Certificate

active

06410170

ABSTRACT:

BACKGROUND
The trend of ever increasing magnetic storage density and data transfer rates requires magnetic materials with superior characteristics. Soft magnetic materials with high magnetic flux density B
s
are of great interest for thin film write head applications. At high operating frequencies, eddy currents in the write head cause a reduction in the permeability of the pole material, which in turn reduces the efficiency of the head.
Lamination of the magnetic pole material with insulation layer is commonly used as a means to suppress the eddy-current loss during the high frequency operation as disclosed in U.S. Pat. No. 5,750,275, by Katz et al., entitled THIN FILM HEADS WITH INSULATED LAMINATION FOR IMPROVED HIGH FREQUENCY PERFORMANCE, issued May 12, 1998, herein incorporated by reference in its entirety. Laminating with an insulative material, however, also reduces the B
s
of the structure.
Recently high B
s
Co-based or Fe-based amorphous alloys with high intrinsic electrical resistivity &rgr; have also received great attention, such as disclosed in U.S. Pat. No. 5,725,685, by Hayakawa et al., entitled SOFT MAGNETIC ALLOY THIN FILM WITH NITROGEN-BASED AMORPHOUS PHASE, issued Mar. 10, 1998. Such alloys, however have relatively low B
s
, typically less than about 15 kG, and often suffer from poor thermal stability and corrosion resistance.
Other work has shown increasing resistivity of FeXN sputtered films using N
2
, but, this work has also shown a corresponding reduction in coercivity. Such work has shown FeXN formed primarily of &agr; phase or body centered cubic Fe, with only a small portion of &ggr; phase or face centered cubic Fe
4
N.
What is desired is a soft magnetic material having high magnetic moment B
s
, low magnetostriction &lgr;
s
, high permeability, high frequency performance, corrosion resistance, and thermal stability.
SUMMARY
A preferred method of the present invention provides an improved thin film for carrying magnetic flux. With the preferred method, the magnetic thin film may be formed by depositing Fe by reactive sputtering using N
2
to form a thin film comprising &agr;-Fe and &ggr;-Fe
4
N. With this method, the relative percentage of &ggr;-Fe
4
N in the deposited film is increased to provide expanded lattice constants for both the &agr;-Fe and the &ggr;-Fe
4
N. Increasing &ggr;-Fe
4
N increases resistivity while expanded lattice constants provide improved coercivity in higher resistivity films.
Increasing the percentage of &ggr;-Fe
4
N to provide expanded lattice constants for both the &agr;-Fe and &ggr;-Fe
4
N may be accomplished by adjusting sputtering power, N
2
gas percentage, a flow rate of N
2
, and substrate bias. In some embodiments, high sputtering power of about 3-4 kW with about 15-30 percent of N
2
may be used to sputter FeX, where X is selected from the group consisting of Rh, Ta, Hf, Al, Zr, Ti, Ru, Si, Cr, V, Sr, Nb, Mo, Ru, and Pd, to provide expanded &agr;-Fe and the &ggr;-Fe
4
N lattice constants.
In preferred methods and embodiments of the present invention, high resistivity low coercivity FeXN thin films are possible. In some embodiments, FeXN films having resistivity values greater than about 50 &mgr;&OHgr;cm, 80 &mgr;&OHgr;cm, 100 &mgr;&OHgr;cm, 115 &mgr;&OHgr;cm, or more, for coercivity values less than about 10 Oe, 5 Oe, or 3 Oe are possible. Furthermore, these results may be obtained for values of B
s
greater than around 12 kG to 17 kG.
Embodiments of the improved thin film of the present invention may be used for pole or shield structures in magnetic heads, such as disk, tape, or other type data storage and retrieval apparatuses, to improve high frequency performance.


REFERENCES:
patent: 5304258 (1994-04-01), Ishiwata et al.
patent: 5475554 (1995-12-01), Ishiwata et al.
patent: 5589221 (1996-12-01), Hiramoto et al.
patent: 5600520 (1997-02-01), Aokura et al.
patent: 5617275 (1997-04-01), Ogura et al.
patent: 5725685 (1998-03-01), Hayakawa et al.
patent: 5736264 (1998-04-01), Ishiwata et al.
patent: 5750251 (1998-05-01), Ohji
patent: 5768072 (1998-06-01), Ueta et al.
patent: 5774308 (1998-06-01), Ohtsuka et al.
patent: 5777824 (1998-07-01), Gray
patent: 5777828 (1998-07-01), Kameyama et al.
patent: 5792547 (1998-08-01), Liu et al.
patent: 5831801 (1998-11-01), Shouji et al.
patent: 5835316 (1998-11-01), Mukaide et al.
patent: 5837392 (1998-11-01), Katori
patent: 5849400 (1998-11-01), Hiramoto et al.
patent: 6233116 (2001-05-01), Chen et al.
Barnard, J.A., Tan, M., Waknis, A., and Haftek, E., “Magnetic properties and structure of Al/Fe-N periodic multilayer thin films”,J. Appl. Phys.,vol. 69, No. 8, Apr. 15, 1992, pp. 5298-5300.
Hong, Jongill, Sin, Kyusik, Nguyentran, Lee and Wang, Shan X., “Soft Magnetic Properties and Microstructures of FeRhN High Moment Thin Films,”IEEE Transactions on Magnetics,vol. 33, No. 5, Sep. 1997, pp. 2845-2847.
Inturi, V.R. and Barnard, V.R., “Studies of laminated and single layer high moment soft FeTaN films,”J. Appl. Phys.,vol. 81, No. 8, Part 2, Apr. 15, 1997, pp. 4504-4506.
Jones, Jr., R.E., “Magnetic Properties of Fe(N)/NiFe(N) Sputtered on Sloping Surfaces,”IEEE Transactions on Magnetics,vol. 32, No. 5, Sep. 1996, pp. 4588-4590.
Katori, Kenji, Hayashi, Kazuhiko, Hayakawa, Masatoshi and ASO, Koichi, “Soft Magnetic Properties for Fe-Al-N / Si-N Multilayered Films,”Journal of the Magnetic Society of Japan,vol. 13, Supplement S1, 1989, pp. 335-339.
Kubota, K. and Naoe, M., “Magnetic properties of Fe-N/Al-N multilayered films prepared by ion-assist sputtering,”J. Appl. Phys.,vol. 69, No. 8, Apr. 15, 1991, pp. 5295-5297.
Maass, W. and Rohrmann, H., “Improved Magnetic Anisotropy and Magnetorestriction by Laminating FeAl(N) with Permalloy to Multilayers,”IEEE Transactions on Magnetics,vol. 34, No. 4, Jul. 1998, pp. 1435-1437.
Makino, S., Shinkai, S., Takeshima, Y., Nakamura, T., Yabuta, M. and Kitamura, M., “High Density Recording FeTaN Laminated Hard Disk Heads,”IEEE Transactions on Magnetics,vol. 29, No. 6, Nov. 1993, pp. 3882-3884.
Nago, K., Aokura, I., Yamanishi, H., Sakakima, H., and Osano, K., “Substrate Bias Effect on the Magnetic Properties of Fe-Ta-N Films, ”IEEE Translation Journal on Magnetics in Japan,vol. 8, No. 12, Dec. 1993, pp. 934-940.
Nguyentran, Lee, Sin, Kyusik, Hong, Jongill, Pizzo, Patrick P., Wang, Shan X., “Corrosion Resistance of Low Coercivity, High Moment FeXN (X=Rh, Mo) Thin Film Head Materials,”Department of Materials Engineering Manuscript,Stanford University, California, Jan. 31, 1997, pp. 1-3.
W. Maass et al. “Improved Magnetic Anisotrophy . . . ” IEEE Transactions on Magnetics, vol. 34, No. 4, Jul. 1998.*
Russak, Michael A., Jahnes, Christopher V., Klokholm, Erik, Lee, Jo-Won, Re, Mark E. and Webb, C. Bucknell, “Magnetic and structural characterization of sputtered FeN multilayer films,”J. Appl. Phys.,vol. 70, No. 10, Nov. 15, 1991, pp. 6427-6429.
Sin, Kyusik and Wang, Shan X., “FeN/AlN Multilayer Films For High Moment Thin Film Recording Heads,”IEEE Transactions on Magnetics,vol. 32, No. 5, Sep. 1996, pp. 3509-3511.
Slonczewski, John C., Petek, Bojan and Argyle, Bernell E., “Micromagnetics of Laminated Permalloy Films,”IEEE Transactions on Magnetics,vol. 24, No. 3, May 1988, pp. 2045-2054.
Li, Shuxiang, Freitas, P.P., Rogalski, M.S., Azaevedo, M., Sousa, J.B., Dai, Z.N., Soares, J.C., Matsakawa, N. and Sakakima, H., “Magnetic properties and structure of a new multilayer [FeTaN/TaN]n for recording heads,”J. Appl. Phys.,vol. 81, No. 8, Apr. 15, 1997, pp. 4501-4503.
van de Riet, E., Klaassens, W. and Roozeboom, F., “On the origin of the uniaxial anistropy in nanocrystalline soft-magnetic materials,”J. Appl. Phys.vol. 81, vol. 2, Jan. 15, 1997.
Wang, S., Obermyer K.E. and Kryder, M.H., “Improved High Moment FeAlN/SiO2 Laminated materials for Thin Film Recording Heads,”IEEE Transactions on Magnetics,vol. 27, No. 6, Nov. 1991, pp. 4879-4881.
Wang, Xiang Wang, “Thin Film Recording Heads Using High Moment Soft Magnetic Materials,”A Dissertation,Carnegie Mellon University, Pittsburgh, PA; Nov. 19, 1993, pp. 59-105.
Wang, S., Liu, F., Maranowski,

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High resistivity FeXN sputtered films for magnetic storage... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High resistivity FeXN sputtered films for magnetic storage..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High resistivity FeXN sputtered films for magnetic storage... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2935543

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.