Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2007-12-18
2007-12-18
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S015000, C117S019000
Reexamination Certificate
active
11040573
ABSTRACT:
Bulk Aluminum Antimonide (AlSb)-based single crystal materials have been prepared for use as ambient (room) temperature X-ray and Gamma-ray radiation detection.
REFERENCES:
patent: 5391882 (1995-02-01), Rhiger
patent: 6331705 (2001-12-01), Eisen et al.
D.Shaw, et al, Tantalum doping and high resistivity in aluminium antimonide, Dec. 17, 1962, pp. 295-300.
Yee, J., et al., “AlSb As A High-Energy Photon Detector,” IEEE Transactions on Nuclear Sicence, vol. NS-24, No. 4, Aug. 1997, pp. 1962-1967.
Stallinga, P., et al., “Electron Paramagnetic Resonance Study of Se-doped AlSb: Evidence for Negative-U of the DX Center,” submitted to Phys. Rev. B, May 15, 1995, pp. 1-14.
Lin, C. T., et al., “Growth and Characterization of Doped and Undoped AlSb Single Crystals,” Journal of Crystal Growth 104, (1990), Elsevier Science Publishers B.V., pp. 653-660.
Lin, C. T., et. al., “On the Growth of AlSb Single Crystals,” Journal of Crystal Growth 94, (1989), Elsevier Science Publishers B.V., pp. 955-958.
Albers, W., “Preparation of Single-Phase Crystals of Compounds with Extremely Small Existence Regions,” The Journal of Chemical Physics, vol. 43, No. 12, Dec. 15, 1963, pp. 4401-4402.
Sherohman, J., “Two-Phase Annealing of Single Crystal CdS,” UCRL-84859 Preprint, Lawrence Livermore National Laboratory, Jul. 28, 1980, 15 pages.
Coombs, III Arthur W.
Sherohman John W.
Yee Jick H.
Hiteshew Felisa
Lawrence Livermore National Security LLC
Lee John H.
Staggs Michael C.
LandOfFree
High resistivity aluminum antimonide radiation detector does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High resistivity aluminum antimonide radiation detector, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High resistivity aluminum antimonide radiation detector will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3834159