1990-06-12
1991-09-17
James, Andrew J.
357 6, 357 231, H01L 2702
Patent
active
050499700
ABSTRACT:
A high resistive element is provided that constitutes an element of integrated circuits comprising an oxide film formed on a semiconductor substrate and a polysilicon film formed on the oxide film. The high resistive element is prepared by ion injection of silicon ions and conductive impurities in the oxide film through the polysilicon film.
Okumura Toshiyuki
Onishi Shigeo
Sakiyama Keizo
Tanaka Ken'ichi
Bowers Courtnay A.
James Andrew J.
Sharp Kabushiki Kaisha
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