High resistance photoconductor structure for multi-element infra

Facsimile and static presentation processing – Facsimile – Specific signal processing circuitry

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358 16, 358 58, H01L 2714

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active

047316403

ABSTRACT:
A high resistance, low noise, multi-layer, thin film photoconductive, infrared detector operable to be easily coupled to charge couple devices; having an enhanced photoconductive gain due to the use of a bias voltage across a depletion layer of n-doped HgCdTe resulting in the flow of electron charge in the bulk of depletion region and the flow of electron holes along the surface of the depletion region. In one embodiment of this invention an additional layer is incorporated into the structure having specific thickness, of 1/4 of the wavelength of the energy received. This additional layer of material behaves as resonant cavity enhancing the quantium efficiency. In a further embodiment, a configuration for a high resistance photoconductor detector structure is disclosed utilizing a cylindrical topography to circumvent lateral edge problems in the high resistance photoconductive structure. Finally, arrays composed of a multiplicity of the described detectors are taught using the cylindrical topography embodiment.

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