High resistance cermet film and method of making the same

Details High resistance cermet film and method of making the same High resistance cermet film and method of making the same

1975-01-23

1977-03-01

Lesmes, George F.

Stock material or miscellaneous articles

Composite

Of silicon containing

428433, 428469, 204192, 427101, 427123, 427126, B32B 906, B32B 306

Patent

active

040103129

ABSTRACT:
A cermet film includes metal particles in an insulator with the metal particles having an average diameter of from about 30A to about 120A. The cermet film has a high resistivity, and low temperature coefficient of resistivity, and is stable under electric fields of up to 10.sup.5 volts/cm. The cermet film can be formed by co-sputtering the metal and the insulator onto a substrate. The sputtered cermet film is then annealed in a reducing atmosphere whereby its resistivity is increased without a corresponding change in its temperature coefficient of resistivity.

REFERENCES:
patent: 3200010 (1965-08-01), Place
patent: 3326645 (1967-06-01), Counts et al.
patent: 3326720 (1967-06-01), Bruhl et al.
patent: 3329526 (1967-07-01), Daily et al.
patent: 3416960 (1968-12-01), Kelly et al.
patent: 3669724 (1972-06-01), Brand

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