High removal rate chemical-mechanical polishing

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

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216 38, 216 39, 451 36, 451 56, H01L 21304

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active

056652011

ABSTRACT:
Chemical-mechanical polishing is conducted under aggressive conditions, preferably with aggressive conditioning of the polishing pad, to effect uniform planarization at high removal rates. It is preferred to condition the polishing pad with an abrasive diamond grit wheel and to vary the residence time of the diamond grit for different sections of the polishing pad.

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