Metal treatment – Stock – Ferrous
Patent
1974-06-28
1978-04-25
Larkins, William D.
Metal treatment
Stock
Ferrous
357 13, 357 58, 357 89, 357 29, 148175, H01L 2972
Patent
active
040866106
ABSTRACT:
A high-voltage power transistor is hereinafter described which is able to withstand fluences as high as 3 .times. 10.sup.14 neutrons per square centimeter and still be able to operate satisfactorily. The collector may be made essentially half as thick and twice as heavily doped as normally and its base is made in two regions which together are essentially four times as thick as the normal power transistor base region. The base region has a heavily doped upper region and a lower region intermediate the upper heavily doped region and the collector. The doping in the intermediate region is as close to intrinsic as possible, in any event less than about 3 .times. 10.sup.15 impurities per cubic centimeter. The second base region has small width in comparison to the first base region, the ratio of the first to the second being at least about 5 to 1. The base region having the upper heavily doped region and the intermediate or lower low doped region contributes to the higher breakdown voltage which the transistor is able to withstand. The high doping of the collector region essentially lowers that portion of the breakdown voltage achieved by the collector region. Accordingly, it is necessary to transfer certain of this breakdown capability to the base region and this is achieved by using the upper region of heavily doped and an intermediate or lower region of low doping.
REFERENCES:
patent: 3427515 (1969-02-01), Blicher et al.
patent: 3460009 (1969-08-01), Kisinko et al.
Denning et al., "Epitaxial pi-nu n-p-n High Voltage Power Transistors" IEEE Trans. on Electron Dev., vol. ED 17, Sept. 1970, pp. 711-716.
Lauritzen et al., "Design Tradeoffs for Neutron . . . ", IEEE Trans. on Nuclear Science, Nov. 1964, pp. 39-46.
Clark Lowell E.
Saltich Jack L.
Clark Lowell E.
Larkins William D.
Motorola Inc.
Rauner Vincent J.
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