Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2006-06-06
2006-06-06
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S010000, C257S227000, C257S292000, C257S293000, C257S294000, C257S411000, C257S414000, C257S432000, C257S439000, C257S639000, C257S649000, C257S760000, C257SE31110
Reexamination Certificate
active
07057262
ABSTRACT:
An optical device having a high reflector tunable stress coating includes a micro-electromechanical system (MEMS) platform, a mirror disposed on the MEMS platform, and a multiple layer coating disposed on the mirror. The multiple layer coating includes a layer of silver (Ag), a layer of silicon dioxide (SiO2) deposited on the layer of Ag, a layer of intrinsic silicon (Si) deposited on the layer of SiO2, and a layer of silicon oxynitride (SiOxNy) deposited on the layer of Si. The concentration of nitrogen is increased and/or decreased to tune the stress (e.g., tensile, none, compressive).
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Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Soward Ida M.
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