High rate, low temperature silicon deposition system

Details High rate, low temperature silicon deposition system High rate, low temperature silicon deposition system

1983-12-19

1986-04-22

Lacey, David L.

Coating apparatus

Gas or vapor deposition

With treating means

118 501, 156DIG102, C23C 1650

Patent

active

045834920

ABSTRACT:
A radio frequency, plasma-enhanced, vapor deposition reactor has apparatus (3-7) for providing a flow of silane in an inert gas carrier, a deposition chamber (20) formed between a pair of flow restrictors (18, 27) and an RF coil (22) for providing inductive coupling of RF power (24) for plasma excitation, disposed downstream of a fixture (8) for holding the substrate upon which amorphous silicon is to be disposed. A baffle (30) provides diversion of the gas flow toward a gravity trap chamber (31), thereby collecting some particulates and prolonging the cycle time before plugging of the vacuum pump (7) can occur.

REFERENCES:
patent: 3619283 (1971-11-01), Carpenter et al.
patent: 3632429 (1972-01-01), Maeda et al.
patent: 4257793 (1981-03-01), Kimishima et al.
patent: 4298629 (1981-11-01), Nozaki et al.
patent: 4379943 (1983-04-01), Yang et al.
patent: 4398343 (1983-08-01), Yamazaki
patent: 4479845 (1984-10-01), Nisizawa et al.
patent: 4500565 (1985-02-01), Hiramoto
S. Zirinsky, Retort for Pyrolytic Vapor Deposition of Thin Films, IBM Technical Disclosure Bulletin, vol. 16, No. 4, (Sep. 1973).

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