High-rate barrier polishing composition

Details High-rate barrier polishing composition High-rate barrier polishing composition

2007-11-27

2007-11-27

Marcheschi, Michael (Department: 1755)

Abrasive tool making process, material, or composition

With inorganic material

C051S308000, C051S309000, C106S003000, C252S079100, C510S397000, C510S380000, C510S175000, C510S367000, C510S368000, C510S369000, C510S370000, C510S375000

Reexamination Certificate

active

10670534

ABSTRACT:
The solution is useful for removing a barrier material from a semiconductor substrate. The solution comprises, by weight percent, 0.01 to 25 oxidizer, 0 to 15 inhibitor for a nonferrous metal, 0 to 15 abrasive, 0 to 20 complexing agent for the nonferrous metal, 0.01 to 12 barrier removal agent and balance water. The barrier removal agent is selected from the group comprising imine derivative compounds, hydrazine derivative compounds and mixtures thereof.

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