High rate atomic layer deposition apparatus and method of using

Details High rate atomic layer deposition apparatus and method of using High rate atomic layer deposition apparatus and method of using

2004-06-25

2010-06-22

Zervigon, Rudy (Department: 1792)

Coating apparatus

Gas or vapor deposition

C118S696000, C118S695000, C118S698000, C118S706000, C156S345240, C156S345260, C156S345330

Reexamination Certificate

active

07740704

ABSTRACT:
A processing system for performing atomic layer deposition (ALD) including a process chamber, a substrate holder provided within the process chamber, and a gas injection system configured to supply a first process gas and a second process gas to the process chamber. The gas injection system is configured to introduce the first process gas and the second process gas to the processing chamber at a first location and a second location, wherein at least one of the first process gas and the second process gas is alternatingly and sequentially introduced between the first location and the second location.

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Standard Technique Collections of the JPO, 1-5-1-4, ALCVD (Atomic Layer CVD).

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