Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2006-04-11
2006-04-11
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S094000, C257S095000, C257S099000
Reexamination Certificate
active
07026657
ABSTRACT:
The invention concerns a light-emitting diode chip (1) comprising a radiation-emitting active region (32) and a window layer (2). To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region (32) is smaller than the cross-sectional area of the window layer (2) available for the decoupling of light.The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.
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Bogner Georg
Kugler Siegmar
Neumann Gerald
Nirschl Ernst
Oberschmid Raimund
Fish & Richardson P.C.
Flynn Nathan J.
Osram GmbH
Sefer Ahmed N.
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