High quantum efficiency photodiode device

Details High quantum efficiency photodiode device High quantum efficiency photodiode device

1986-10-17

1988-11-01

Davie, James W.

357 75, H01L 2302, H01L 2312

Patent

active

047823828

ABSTRACT:
High quantum efficiency photodiode device having a pair of photodiodes with light receiving surfaces in parallel spaced relation in a closed cavity. Light is admitted to the cavity through an aperture in such manner that it impinges obliquely upon the light receiving surfaces and is reflected back and forth between the diodes until absorbed. A mirror positioned at the end of the diodes opposite the aperture reflects impinging thereon back to the photodiodes.

REFERENCES:
patent: 4343187 (1982-08-01), Kaji
patent: 4675607 (1987-06-01), Golker et al.
E. F. Zalewski et al; "Silicon Photodiode Device with 100% External Quantum Efficiency"; Applied Optics; Sep. 15, 1983; vol. 22, No. 18, pp. 2867-2873.

Affiliated with

Also associated with

Rating

High quantum efficiency photodiode device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High quantum efficiency photodiode device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High quantum efficiency photodiode device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-893960