High quality single crystal and method of growing the same

Details High quality single crystal and method of growing the same High quality single crystal and method of growing the same

2005-10-19

2008-08-26

Hiteshew, Felisa (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S030000, C117S032000, C117S217000

Reexamination Certificate

active

07416603

ABSTRACT:
Disclosed is a method of growing a single crystal from a melt contained in a crucible. The method includes the step of making the temperature of a melt increase gradually to a maximum point and then decrease gradually along the axis parallel to the lengthwise direction of the single crystal from the interface of the single crystal and the melt to the bottom of the crucible. The increasing temperature of the melt is kept to preferably have a greater temperature gradient than the decreasing temperature thereof. Preferably, the axis is set to pass through the center of the single crystal. Preferably, the convection of the inner region of the melt is made smaller than that of the outer region thereof.

REFERENCES:
patent: 5938836 (1999-08-01), Tomioka et al.
patent: 6592662 (2003-07-01), Fusegawa et al.

Affiliated with

Also associated with

Rating

High quality single crystal and method of growing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High quality single crystal and method of growing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High quality single crystal and method of growing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3998061