High quality oxide on an ion implanted polysilicon surface

Details High quality oxide on an ion implanted polysilicon surface High quality oxide on an ion implanted polysilicon surface

1987-08-28

1989-04-04

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 24, 437 27, 437233, H01L 21265

Patent

active

048187119

ABSTRACT:
A method for growing a high quality oxide layer on the surface of a polysilicon film for use as an interpoly dielectric. The method comprises depositing a silicon film on a wafer and implanting the silicon film with phosphorous ions. The wafers are then sent into a diffusion tube to activate the dopant. This operation is carried out in an ambient of dry oxygen and the result is the silicon film is now polysilicon and an oxide layer has been grown on the polysilicon film. The wafers are then implanted using argon ions, the implantation is carried out through the oxide layer. The result is the surface layers of the polysilicon layer are rendered amorphous. The oxide layer grown on the polysilicon film is then removed. A new oxide layer is then grown on the polysilicon film. The result is an oxide layer with excellent physical and electrical characteristics.

REFERENCES:
patent: 4172260 (1979-10-01), Okabe et al.
patent: 4463492 (1984-08-01), Maeguchi
patent: 4634473 (1987-01-01), Swartz et al.
patent: 4696092 (1987-09-01), Doering et al.
patent: 4697333 (1987-10-01), Nakahara
patent: 4762801 (1988-08-01), Kapoor

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