High quality gate oxides for VLSI devices

Details High quality gate oxides for VLSI devices High quality gate oxides for VLSI devices

1984-12-10

1986-03-11

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

148DIG81, 148DIG118, 156657, 427 93, 4272554, H01L 21306

Patent

active

045744661

ABSTRACT:
In a 1.2 micron CMOS process, the gate oxide is formed by growing a 1000 Angstrom thickness of sacrificial oxide, immediately performing an oxide strip and then effecting a thin gate oxidation. The gate oxidation step is characterized by a temperature ramp from 700 to 950 degrees Centigrade in a flow of 9 liters per minute nitrogen and 0.36 liters per minute oxygen. At the 950 degrees Centigrade point, the nitrogen flow ceases and the oxygen flow increases to 9 liters per minute. The temperature is then downwardly ramped to 900 degrees Centigrade.

REFERENCES:
patent: 4214919 (1980-07-01), Young
patent: 4518630 (1985-05-01), Grasser

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