High-Q stress-compensated crystal device

Details High-Q stress-compensated crystal device High-Q stress-compensated crystal device

1987-09-08

1988-06-28

Budd, Mark O.

Electrical generator or motor structure

Non-dynamoelectric

Piezoelectric elements and devices

310365, 310366, H01L 4108

Patent

active

047541873

ABSTRACT:
A doubly rotated, stress and temperature compensated quartz crystal resonator. The crystal cuts are arbitrarity designated the SK1 and SK2 cuts. Lateral field excitation is used to excite only the b-mode of vibration (fast quasi-shear) and suppress the c mode (slow quasi-shear). Exclusive excitation of the b mode produces a resonator with a higher Q and lower phase noise than otherwise achievable.

REFERENCES:
patent: 4625138 (1986-11-01), Ballato
"Excess Noise in Quartz Crystal Resonators", pp. 218-225, IIIE, 1983; J. J. agnepain and M. Oliver, Laboratoire de Physique et Metrologie des Oscillateurs du CNRS, France and F. L. Walls, Nat'l Bureau of Standards, Boulder, Col.
"Stress Compensated Orientations for Thickness-Shear Quartz Resonators", pp. 213-221; Bikash K. Sinha; Proc. 35th Ann. Freo. Control Symposium, USAERADCOM, Ft. Monmouth, N.J. 07703, May 1981.
"Lateral-Field Excitation of Quartz Plates", pp. 512-515, by Elizabeth R. Hatch and Arthur Ballato, reprinted from Proceedings of the Ultrasonice Symposium.

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