Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1994-12-06
1996-08-13
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
336 15, 336170, 336223, 336227, 336232, H01L 2900
Patent
active
055459161
ABSTRACT:
An inductive structure for use in high frequency integrated circuits is provided. A conductive path forming the structure is arranged so extra conductive material is located at portions of the cross-section of the conductive path where current tends to flow at high frequency.
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J. Y. C. Chang, et al. "Large Suspended Inductors on Silicon and Their Use in a 2-.mu.m CMOS RF Amplifier", IEEE Electron Device Letters, vol. 14, No. 5, May 1993, pp. 246-248.
K. B. Ashby, W. C. Finley, J. J. Bastek, S. Moinian and I. A. Koullias, "High Q Inductors For Wireless Applications In a Complementary Silicon Bipolar Process", 1994 Bipolar/BiCMOS Circuits & Technology Meeting, pp. 179-182.
AT&T Corp.
Ngo Ngan V.
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