High Q integrated inductor

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

336 15, 336170, 336223, 336227, 336232, H01L 2900

Patent

active

055459161

ABSTRACT:
An inductive structure for use in high frequency integrated circuits is provided. A conductive path forming the structure is arranged so extra conductive material is located at portions of the cross-section of the conductive path where current tends to flow at high frequency.

REFERENCES:
patent: 1935404 (1933-11-01), Leopold
patent: 3140458 (1964-07-01), Willecke
patent: 4979016 (1990-12-01), Lee
patent: 5027255 (1991-06-01), Zeitlin et al.
patent: 5095357 (1992-03-01), Andoh et al.
patent: 5206623 (1993-04-01), Rochette et al.
patent: 5225969 (1993-07-01), Takaya et al.
patent: 5233310 (1993-08-01), Inoue
patent: 5243319 (1993-09-01), Brokaw
J. Y. C. Chang, et al. "Large Suspended Inductors on Silicon and Their Use in a 2-.mu.m CMOS RF Amplifier", IEEE Electron Device Letters, vol. 14, No. 5, May 1993, pp. 246-248.
K. B. Ashby, W. C. Finley, J. J. Bastek, S. Moinian and I. A. Koullias, "High Q Inductors For Wireless Applications In a Complementary Silicon Bipolar Process", 1994 Bipolar/BiCMOS Circuits & Technology Meeting, pp. 179-182.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High Q integrated inductor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High Q integrated inductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High Q integrated inductor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1050095

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.