High Q integrated inductor

Details High Q integrated inductor High Q integrated inductor

1994-12-06

1997-06-03

Spyrou, Cassandra C.

Inductor devices

Coil or coil turn supports or spacers

Printed circuit-type coil

336183, 336232, H01L 2702

Patent

active

056358920

ABSTRACT:
An inductive structure is provided which displays an increased self-inductance and improved Q at high frequencies. The improvement resides in the disposition proximate the inductive structure an amount of magnetic material to increase mutual inductance between adjacent portions of the inductor's conductive path with current flow.

REFERENCES:
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patent: 5095357 (1992-03-01), Andoh
patent: 5206623 (1993-04-01), Rochette et al.
patent: 5225969 (1993-07-01), Takaya et al.
patent: 5233310 (1993-08-01), Inoue
patent: 5243319 (1993-09-01), Brokaw
J. Y. C. Change et al. "Large Suspended Inductors on Silicon and Their Use in a 2-.mu.m CMOS RF Amplifier", IEEE Electron Device Letters, vol. 14. No. 5, May 1993, pp. 246-248.
K.B. Ashby, W.C. Finley, J.J. Bastek, S. Moinian and I.A. Koullias, "High Q Inductors For Wireless Applications In a Complementary Silicon Bipolar Process", 1994 Bipolar/BiCMOS Circuits & Technology Meeting, pp. 179-182.

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