High-Q inductors in silicon technology without expensive metaliz

Details High-Q inductors in silicon technology without expensive metaliz High-Q inductors in silicon technology without expensive metaliz

1994-09-16

1995-08-29

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257508, 257758, 257774, 257776, 336 12, 336 65, 336107, 336138, 336173, 336186, 336223, 336225, H01L 2702, H01L 2348

Patent

active

054463114

ABSTRACT:
A monolithic high-Q inductor structure is formed with multiple metalization levels in a conventional integrated circuit technology in which inductor turns utilize these multiple levels to reduce the inductor resistance. Inductors with Q values above five can be integrated with this approach at radio and microwave frequencies.

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patent: 4797785 (1989-01-01), Jorgensen
patent: 5070317 (1991-12-01), Bhagat
patent: 5095357 (1992-03-01), Andoh et al.
patent: 5227659 (1993-07-01), Hubbard
patent: 5279988 (1994-01-01), Saadat et al.
patent: 5396101 (1995-03-01), Shiga

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