High Q-factor oscillator circuit

Details High Q-factor oscillator circuit High Q-factor oscillator circuit

1999-08-23

2000-11-07

Grimm, Siegfried H.

Oscillators

With distributed parameter resonator

331107DP, 333230, H03B 714, H03B 914

Patent

active

06144264&

ABSTRACT:
A millimeter-wave/microwave oscillator circuit and method of fabricating same are disclosed. A high Q-factor resonator is formed by disposing a transferred electron negative resistance device, such as a Gunn diode, or an IMPATT negative resistance device in a semi-circular cross-sectional shaped resonator cavity. The equivalent capacitance of the negative resistance diode can be designed to resonate with the equivalent series inductance for the resonator cavity by adjusting the dimensions of the cavity and the placement of the negative resistance device therein. Very low cost, compact and lightweight microwave and millimeter-wave integrated circuit power sources using negative resistance diodes can be batch manufactured.

REFERENCES:
patent: 3831110 (1974-08-01), Eastman
patent: 3913035 (1975-10-01), Havens
patent: 4286229 (1981-08-01), Hislop

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