Inductor devices – Coil or coil turn supports or spacers – Printed circuit-type coil
Reexamination Certificate
2006-06-27
2006-06-27
Abraham, Fetsum (Department: 2826)
Inductor devices
Coil or coil turn supports or spacers
Printed circuit-type coil
C336S223000, C336S219000, C336S229000
Reexamination Certificate
active
07068138
ABSTRACT:
An inductor and a method of forming and the inductor, the method including: (a) providing a semiconductor substrate; (b) forming a dielectric layer on a top surface of the substrate; (c) forming a lower trench in the dielectric layer; (d) forming a resist layer on a top surface of the dielectric layer; (e) forming an upper trench in the resist layer, the upper trench aligned to the lower trench, a bottom of the upper trench open to the lower trench; and (f) completely filling the lower trench at least partially filling the upper trench with a conductor in order to form the inductor. The inductor including a top surface, a bottom surface and sidewalls, a lower portion of said inductor extending a fixed distance into a dielectric layer formed on a semiconductor substrate and an upper portion extending above said dielectric layer; and means to electrically contact said inductor.
REFERENCES:
patent: 5148062 (1992-09-01), Goldferb
patent: 5363080 (1994-11-01), Breen
patent: 5793272 (1998-08-01), Burghartz et al.
patent: 5884990 (1999-03-01), Burghartz et al.
patent: 6054329 (2000-04-01), Burghartz et al.
patent: 6114937 (2000-09-01), Burghartz et al.
patent: 6133136 (2000-10-01), Edelstein et al.
patent: 6187680 (2001-02-01), Costrini et al.
patent: 6251528 (2001-06-01), Uzoh et al.
patent: 6297140 (2001-10-01), Uzoh et al.
patent: 6323128 (2001-11-01), Sambucetti et al.
patent: 6333559 (2001-12-01), Costrini et al.
patent: 6335104 (2002-01-01), Sambucetti et al.
patent: 6368484 (2002-04-01), Volant et al.
patent: 6444517 (2002-09-01), Hsu et al.
patent: 6457234 (2002-10-01), Edelstein et al.
patent: 6534374 (2003-03-01), Johnson et al.
patent: 6551931 (2003-04-01), Edelstein et al.
patent: 6842605 (2005-01-01), Lappetelainen et al.
patent: 2002/0172025 (2002-11-01), Megahed et al.
patent: 2002/0197844 (2002-12-01), Johnson et al.
patent: 2003/0067052 (2003-04-01), Matsuo et al.
patent: WO03017479 (2003-02-01), None
Research Disclosure, Apr. 2000, An On-Chip Three-Dimensional Inductor By Damascene Process, pp. 682-683.
Burghartz et al., Monolithic Spiral Inductors Fabricated Using A VLSI Cu—Damascene Interconnect Technology And Low-Loss Substrates, pp. 4.5.1-4.5.4, 1996 IEEE.
Edelstein et al., Spiral And Solenoidal Inductor Structures On Silicon Using Cu—Damascene Interconnects, 1998 IEEE, pp. 18-20.
Burghartz et al., Spiral Inductors And Transmission Iines In Silicon Technology Using Copper-Damascene Interconnects And Low-Loss Substrates, 1997IEEE, pp. 1961-1968.
Andricacos Panayotis C.
Cotte John M.
Deligianni Hariklia
Edelstein Daniel C.
Magerlein John H.
Abraham Fetsum
International Business Machines - Corporation
Schmeiser Olsen & Watts
Steinberg William H.
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