High purity titanium sputtering targets

Details High purity titanium sputtering targets High purity titanium sputtering targets

1994-09-19

1998-06-30

Nguyen, Nam

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20419212, C23C 1434

Patent

active

057728607

ABSTRACT:
A high-purity titanium sputtering target having controlled crystal characteristics. The uniform problem of film thickness distribution on a substrate can be solved by adopting the requirements that (a) the average crystal grain diameters at various portions of the sputtering surface of the target are 500 .mu.m or less, preferably 100 .mu.m or less, and their dispersions are within .+-.20%, and (b) the defined orientation content ratios A have dispersions within .+-.20% and (c) a Ti target crystal structure has a recrystallization structure. The problems in connection with particle generation and lowered film forming rate in collimation sputtering can be solved by adopting the requirements that (d) said orientation content ratios A are is 80% or less, preferably 50% or less, and (e) the defined orientation content ratios B are 20% or less, as necessary, in combination with the aforementioned (a) to (c) requirements.

REFERENCES:
patent: 4842706 (1989-06-01), Fukasawa et al.
patent: 5155063 (1992-10-01), Ito
patent: 5456815 (1995-10-01), Fukuyo et al.
G. R. Haupt et al., Molecular Crystals and Liquid Crystals, Letters Series 2. vol. 7, No. 2, 1 Mar. 1990 "Drift In Film Recrystallization", abstract.
Wickersham, C.E., Jr., Journal of Vacuum Science & Technology A, second series, vol. 5, No. 4 part III, Jul./Aug. 1994, "Crystallographic Target effects in magnetron sputtering", pp. 1755-1758.

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