High-purity Ru powder, sputtering target obtained by...

Alloys or metallic compositions – Ruthenium or rhodium base

Reexamination Certificate

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C075S343000

Reexamination Certificate

active

07578965

ABSTRACT:
A high purity Ru powder wherein the content of the respective alkali metal elements such as Na and K is 10 wtppm or less, and the content of Al is in the range of 1 to 50 wtppm. Further provided is a manufacturing method of such high purity Ru powder wherein Ru raw material having a purity of 3N (99.9%) or less is used as an anode and electrolytic refining is performed in a solution. Further still, provided is a high purity Ru powder for manufacturing a sputtering target which is capable of reducing harmful substances as much as possible, generates few particles during deposition, has a uniform film thickness distribution, has a purity of 4N (99.99%) or higher, and is suitable in forming a capacitor electrode material of a semiconductor memory; a sputtering target obtained by sintering such high purity Ru powder; a thin film obtained by sputtering this target; and a manufacturing method of the foregoing high purity Ru powder.

REFERENCES:
patent: 6036741 (2000-03-01), Shindo et al.
patent: 6284013 (2001-09-01), Shindo et al.
patent: 6589311 (2003-07-01), Han et al.
patent: 6676728 (2004-01-01), Han et al.
patent: 2004/0144204 (2004-07-01), Hisano
patent: 2006/0071197 (2006-04-01), Suzuki
patent: 2000-178721 (2000-06-01), None
patent: 2001-020065 (2001-01-01), None
patent: 2002-105631 (2002-04-01), None
patent: 2002-167668 (2002-06-01), None
JP 2001-020065. English abstract and English machine translation.
Esp@cenet database, one page English Abstract of JP 11-217633, Aug. 1999.
Esp@cenet database, one page English Abstract of JP 9-041131, Feb. 1997.
Esp@cenet database, one page English Abstract of JP 9-227966, Sep. 1997.
Esp@cenet database, one page English Abstract of JP 8-199350, Aug. 1996.
Esp@cenet database, one page English Abstract of JP 8-302462, Nov. 1996.

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