High-purity Ru alloy target, process for producing the same,...

Details High-purity Ru alloy target, process for producing the same,... High-purity Ru alloy target, process for producing the same,...

2011-01-18

2011-01-18

Kastler, Scott (Department: 1736)

Alloys or metallic compositions

Ruthenium or rhodium base

C148S430000, C204S298120, C204S298130

Reexamination Certificate

active

07871564

ABSTRACT:
In order to obtain a high purity sputtered film for a capacitor electrode of a semiconductor memory and to make the sputtered film have uniform thickness and good adhesiveness with Si substrate, a high-purity Ru alloy target is provided, wherein a total content of the platinum group elements excluding Ru is in a range of 15 to 200 wtppm and remnants are Ru and inevitable impurities. Also, provided is a manufacturing method of the high-purity Ru alloy target, comprising the steps of mixing Ru powder having a purity of 99.9% or higher and powder of platinum group elements excluding Ru, performing press molding of the mixed powder to obtain a compact, performing electron beam melting of the compact to obtain an ingot, and forging the ingot at 1400 to 1900° C.

REFERENCES:
patent: 6036741 (2000-03-01), Shindo et al.
patent: 6284013 (2001-09-01), Shindo et al.
patent: 6589311 (2003-07-01), Han et al.
patent: 7578965 (2009-08-01), Shindo et al.
patent: 2004/0144204 (2004-07-01), Hisano
patent: 2007/0175753 (2007-08-01), Hisano
patent: 2007/0240992 (2007-10-01), Shindo et al.
patent: 2009/0114535 (2009-05-01), Oda
patent: 2005/083136 (2005-09-01), None
ASM datasheet of Unclassified miscellaneous alloy, Grade 99.90 (ASTM B717(96)). 2002.
Esp@cenet database, One Page English Abstract of JP 2004-346392 A1, Dec. 9, 2004.
Esp@cenet database, One Page English Abstract of JP 2004-156114 A1, Jun. 3, 2004.
Esp@cenet database, One Page English Abstract of JP 2002-133653 A1, May 10, 2002.
Esp@cenet database, One Page English Abstract of JP 09-041131 A1, Feb. 10, 1997.
Esp@cenet database, One Page English Abstract of JP 2000-178721 A1, Jun. 27, 2000.
Esp@cenet database, One Page English Abstract of JP 2000-178722 A1, Jun. 27, 2000.
Esp@cenet database, One Page English Abstract of JP 2003-277924 A1, Oct. 2, 2003.

Affiliated with

Also associated with

Rating

High-purity Ru alloy target, process for producing the same,... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-purity Ru alloy target, process for producing the same,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-purity Ru alloy target, process for producing the same,... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2672234