High purity diffusion furnace components

Heating – Accessory means for holding – shielding or supporting work...

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432239, F27D 500

Patent

active

049988794

ABSTRACT:
Components for semiconductor diffusion furnaces are constructed of a high purity impervious silicon carbide or silicon nitride matrix deposited on a pre-shaped fibrous matrix of silicon carbide, carbon, or carbon coated silicon carbide. The high purity of the matrix prevents undesired gaseous components from contaminating the atmosphere of the furnace, and the fibrous re-enforcement provides strength combined with light weight.

REFERENCES:
patent: 3951587 (1976-04-01), Alliegro et al.
patent: 4713275 (1987-12-01), Riccitiello et al.
patent: 4761134 (1988-08-01), Foster
patent: 4766013 (1988-08-01), Warren

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