High purity cobalt sputtering targets

Details High purity cobalt sputtering targets High purity cobalt sputtering targets

1997-01-28

1998-09-22

Phipps, Margery

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

420435, C22C 1907

Patent

active

058109838

ABSTRACT:
A process for producing a high purity cobalt is provided comprising the following steps. An aqueous solution of cobalt chloride having a hydrochloric acid concentration of 7 to 12N is provided. The solution includes either or both of Fe and Ni as impurities. The solution is contacted with an anion exchange resin so that cobalt is adsorbed on the resin. Cobalt is eluted from the resin with hydrochloric acid at a concentration of 1 to 6N. The solution containing the eluted cobalt is dried or otherwise concentrated to produce a purified aqueous solution of cobalt chloride having a pH of 0 to 6. Organic materials are preferably removed from the purified solution by active carbon treatment. Electrolytic refining is conducted with the purified aqueous solution as an electrolyte to obtain electrodeposited cobalt. A high purity cobalt sputtering target can be obtained wherein Na content is 0.05 ppm or less; K content is 0.05 ppm or less; Fe content is 1 ppm or less; Ni content is 1 ppm or less; Cr content is 1 ppm or less; U content is 0.01 ppb or less; Th content is 0.01 ppb or less; C content is 50 ppm or less, preferably 10 ppm or less; and O content is 100 ppm or less, the balance being cobalt and unavoidable impurities.

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Obata, Takeshi et al, Bunseki Kagaku (1994), 43(9) 697-702 "Determination of Traceimpurities in High Purity Cobalt by Glow Discharge MS".

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