High-purity aluminum sputter targets and method of manufacture

Details High-purity aluminum sputter targets and method of manufacture High-purity aluminum sputter targets and method of manufacture

2008-01-22

2008-01-22

King, Roy (Department: 1742)

Metal treatment

Process of modifying or maintaining internal physical...

Heating or cooling of solid metal

C148S690000, C148S693000

Reexamination Certificate

active

10967133

ABSTRACT:
The high-purity aluminum sputter target is at least 99.999 weight percent aluminum and has a grain structure. The grain structure is at least 99 percent recrystallized and has a grain size of less than 200 μm. The method forms high-purity aluminum sputter targets by first cooling a high-purity target blank to a temperature of less than −50 ° C. and then deforming the cooled high-purity target blank introduces intense strain into the high-purity target. After deforming, recrystallizing the grains at a temperature below 200 ° C. forms a target blank having at least 99 percent recrystallized grains. Finally, finishing at a low temperature sufficient to maintain the fine grain size of the high-purity target blank forms a finished sputter target.

REFERENCES:
patent: 5993575 (1999-11-01), Lo et al.
patent: 6197129 (2001-03-01), Zhu et al.
patent: 6228186 (2001-05-01), Pavate et al.
patent: 2001/0047838 (2001-12-01), Segal et al.

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