High purity aluminum conductor used at ultra low temperature

Details High purity aluminum conductor used at ultra low temperature High purity aluminum conductor used at ultra low temperature

1993-07-06

1996-11-12

Simmons, David A.

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

428930, 335216, 505814, 1741251, 148404, B32B 702, B32B 1501

Patent

active

055738613

ABSTRACT:
The aluminum conductor having increase of its electric resistivity kept small at ultra low temperature of 30.degree. K. or lower even after cyclic strain is given at ultra low temperature, by controlling the crystal structure of the high purity aluminum conductor with purity of 99.9-99.9999 wt %. The crystal structure consist of (i) a veritable single or a substantially single crystal consisting of a bundle of sub-grains which have their crystal axes in the same direction or in the directions within a couple of degrees of deviation as a whole which has a specific crystal axis of <111> or <100> or the crystal axes close thereto in the longitudinal direction of the aluminum conductor, or (ii) a polycrystal most of which grains have respective specific crystal axes of <111> and/or <100>, or the crystal axes close thereto with respect to each grain in the longitudinal direction of the aluminum conductor, and have specific grain size of 0.01 mm to 3.0 mm.

REFERENCES:
patent: 3211547 (1965-10-01), Jarrett et al.
patent: 3997339 (1976-12-01), Fichelscher et al.
patent: 4166755 (1979-09-01), Fister et al.
patent: 4213800 (1980-07-01), Mayo et al.
patent: 4537642 (1985-08-01), Saito et al.
patent: 4659007 (1987-04-01), Onishi et al.
patent: 4711825 (1987-12-01), Oberly et al.
patent: 4976792 (1990-12-01), Sawada
patent: 5189386 (1993-02-01), Tada et al.
patent: 5266416 (1993-11-01), Inoue et al.
patent: 5488850 (1996-02-01), Hasegawa et al.
Woldman's Engineering Alloys, 6th Ed. p. 1764 1979.
Metals Handbook, 9th Ed., vol. 15, pp. 319-323, 1988.
Superconducting Magnetic Energy Storage (SMES), vol. 1: Basic R&D 1984-1985, Section 4, Parts A & B, pp. 4-1 through 4-99, Electric Power Research Institute, Research Project 2572-2 (Final Report, Nov. 1990).
Database Inspec Institute of Electrical Engineers, Stevenage, GB, Inspec No. 1730206, Niculescu D et al., "Aluminum for cryoelectrotechnics", 1980, vol. 32, No. 9, ISSN 0039-3940, pp. 983-1002.

Affiliated with

Also associated with

Rating

High purity aluminum conductor used at ultra low temperature does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High purity aluminum conductor used at ultra low temperature, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High purity aluminum conductor used at ultra low temperature will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-561225