High pressure sensor structure and method

Details High pressure sensor structure and method High pressure sensor structure and method

1994-11-02

1996-12-03

Walberg, Teresa J.

Electrical resistors

Resistance value responsive to a condition

Fluid- or gas pressure-actuated

338 36, 73721, H01L 1010

Patent

active

055812260

ABSTRACT:
A high pressure sensor structure (11, 111, 211) includes a housing (12, 112, 212) having an upper cavity portion (13, 113, 213) and a lower cavity portion (16, 116, 216). A diaphragm (18, 118, 218) separates the upper cavity portion (13, 113, 213) from the lower cavity portion (16, 116, 216). A semiconductor chip (26, 126, 226) is attached to the upper surface of the diaphragm (18, 118, 218) within the upper cavity portion (13, 113, 213). The diaphragm (18, 118, 218) has a thickness (21, 121, 221) and an exposed width (23, 123, 223) such that the semiconductor chip (26, 126, 226) generates a measurable output signal when the lower surface of the diaphragm (18, 118, 218) is exposed to a high pressure environment.

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patent: 5343757 (1994-09-01), Tate
patent: 5461922 (1995-10-01), Koen
patent: 5488869 (1996-02-01), Renaud

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