High pressure processing chamber for semiconductor substrate

Details High pressure processing chamber for semiconductor substrate High pressure processing chamber for semiconductor substrate

2007-08-14

2007-08-14

Kackar, Ram N. (Department: 1763)

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With measuring, sensing, detection or process control means

C156S345100, C118S715000, C134S001100, C134S001200, C134S001300, C438S631000, C438S645000, C430S256000

Reexamination Certificate

active

10897296

ABSTRACT:
A high pressure chamber comprises a chamber housing, a platen, and a mechanical drive mechanism. The chamber housing comprises a first sealing surface. The platen comprises a region for holding the semiconductor substrate and a second sealing surface. The mechanical drive mechanism couples the platen to the chamber housing. In operation, the mechanical drive mechanism separates the platen from the chamber housing for loading of the semiconductor substrate. In further operation, the mechanical drive mechanism causes the second sealing surface of the platen and the first sealing surface of the chamber housing to form a high pressure processing chamber around the semiconductor substrate.

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