High-pressure polysilicon encapsulated localized oxidation of si

Details High-pressure polysilicon encapsulated localized oxidation of si High-pressure polysilicon encapsulated localized oxidation of si

1990-11-13

1992-12-29

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 69, 437 67, 437 72, 437 61, 148DIG117, H01L 21302, H01L 2176

Patent

active

051751232

ABSTRACT:
A reduction in defects and lateral encroachment is obtained by utilizing a high pressure oxidation in conjunction with an oxidizable layer conformally deposited over an oxidation mask. The use of high pressure oxidation provides for the formation of LOCOS oxide without the formation of defects. Any native oxide present on the substrate surface is removed by using a ramped temperature deposition process to form oxidizable layer and/or a high temperature anneal is performed to remove the native oxide at the substrate surface. In this embodiment, any oxide which can act as a pipe for oxygen diffusion is removed. Therefore, nominal or no lateral encroachment is exhibited.

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