High pressure plasma deposition of silicon

Details High pressure plasma deposition of silicon High pressure plasma deposition of silicon

1980-05-09

1981-09-29

Newsome, John H.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 86, B05I 108

Patent

active

042923425

ABSTRACT:
Polycrystalline silicon is deposited on the interior surface of a shaped container. The silicon is deposited by reacting hydrogen and a silicon bearing gas in the presence of a high pressure plasma. The silicon body is separated from the shaped container by utilizing thermal expansion shear stress.

REFERENCES:
patent: 3658673 (1972-04-01), Kugler et al.
patent: 3865647 (1975-02-01), Reuschel
patent: 4003770 (1977-01-01), Janowiecki et al.
patent: 4102764 (1978-07-01), Harvey et al.
patent: 4123989 (1978-11-01), Jewett

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