High pressure liquid phase epitaxy reactor chamber with direct s

Details High pressure liquid phase epitaxy reactor chamber with direct s High pressure liquid phase epitaxy reactor chamber with direct s

1993-10-28

1994-12-27

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

With means for measuring, testing, or sensing

117220, 117224, 117907, 117943, 118726, 4222451, C23C 1600

Patent

active

053755570

ABSTRACT:
An apparatus (10) and method are provided for directly viewing, through a viewport assembly (26), the process for forming a layer of mercury cadmium telluride of a predetermined composition on a surface of a wafer (not shown). According to the invention, a molten melt (20) comprising mercury, cadmium and tellurium is provided in a vertically oriented crystal growth chamber (14), which, in turn, is housed in a reactor tube (12). A wafer (not shown) is contacted with the crystal growth melt while cooling the melt below its liquidus temperature at a predetermined rate sufficient to cause a crystal growth layer of mercury cadmium telluride to form on the wafer (not shown). Viewports (26, 48) located approximately radially adjacent to the melt (22) provide direct see through capability to visually monitor the crystal growth process. The present invention is advantageous because the apparatus and method disclosed provide for ease of the growth set-up and operation, yielding mercury cadmium telluride layers of uniform composition and of high purity.

REFERENCES:
patent: 3051558 (1962-08-01), Jost
patent: 3481711 (1969-12-01), Maruyama
patent: 3639718 (1972-02-01), Castonguay et al.
patent: 4401487 (1983-08-01), Lockwood
patent: 5074953 (1991-12-01), Shirata et al.
patent: 5082635 (1992-01-01), Wakatsuki et al.

Affiliated with

Also associated with

Rating

High pressure liquid phase epitaxy reactor chamber with direct s does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High pressure liquid phase epitaxy reactor chamber with direct s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High pressure liquid phase epitaxy reactor chamber with direct s will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-911740