Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Reexamination Certificate
2006-06-20
2006-06-20
Smith, Duane (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
C117S074000, C117S076000, C117S078000, C117S081000, C117S213000, C117S011000, C117S952000
Reexamination Certificate
active
07063741
ABSTRACT:
A method of forming at least one single crystal of a Group III metal nitride. The method includes the steps of: providing a flux material and a source material comprising at least one Group III metal selected from the group consisting of aluminum, indium, and gallium, to a reaction vessel; sealing the reaction vessel; heating the reaction vessel to a predetermined temperature and applying a predetermined pressure to the vessel. The pressure is sufficient to suppress decomposition of the Group III metal nitride at the temperature. Group III metal nitrides, as well as electronic devices having a Group III metal nitride substrate formed by the method are also disclosed.
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Chen Zheng
D'Evelyn Mark Philip
Kadioglu Yavuz
Park Dong-Sil
Vagarali Suresh Shankarappa
General Electric Company
McClintic Shawn A.
Powell, III William E.
Smith Duane
Song Matthew J.
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