Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having growth from a solution comprising a solvent which is...
Reexamination Certificate
2006-09-05
2006-09-05
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having growth from a solution comprising a solvent which is...
C117S068000, C117S201000, C117S929000, C423S446000
Reexamination Certificate
active
07101433
ABSTRACT:
A high temperature/high pressure (HP/HT) apparatus for converting feedstock housed in a capsule into product crystals, comprising at least two electrical heating paths for independent control of both the mean temperature in the reaction cell and the temperature gradient across the reaction cell.
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Hanser A D, et al: “Growth, doping and characterization of epitaxial thin films and patterened structures of A1N, GaN, and A1xGa1-xN”; XP004364890.
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Allison Peter S.
D'Evelyn Mark P.
Giddings Robert A.
Leonelli, Jr. Robert V.
Narang Kristi J.
General Electric Company
Kunemund Robert
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