High pressure chemical vapor deposition

Details High pressure chemical vapor deposition High pressure chemical vapor deposition

1981-10-23

1983-09-13

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 93, 4272552, 4272553, 4272557, 427255, 427 95, H01L 21316, H01L 21318

Patent

active

044042361

ABSTRACT:
A process for carrying out chemical vapor deposition under increased pressure is provided. By carrying out chemical vapor deposition under increased pressure, a boundry layer of reduced thickness is formed which permit formation of a chemical vapor reaction film in the minute necking portions on the surface of the substrate formed during formation of the electrical components, such as a transistor or an integrated circuit. The step of chemical vapor deposition under increased pressure may be followed by chemical vapor deposition at normal or reduced pressure for forming a film of uniform thickness across the wafer.

REFERENCES:
patent: 3573096 (1971-03-01), Tombs
patent: 3843398 (1974-10-01), Maagdenberg
patent: 4282270 (1981-08-01), Nozaki et al.

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