Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having growth from a solution comprising a solvent which is...
Reexamination Certificate
2005-09-13
2005-09-13
Hiteshew, Felisa (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having growth from a solution comprising a solvent which is...
C264S434000
Reexamination Certificate
active
06942729
ABSTRACT:
A design for high pressure/high temperature apparatus and reaction cell to achieve ˜30 GPa pressure in ˜1 cm volume and ˜100 GPa pressure in ˜1 mm volumes and 20-5000° C. temperatures in a static regime. The device includes profiled anvils (28) action on a reaction cell (14, 16) containing the material (26) to be processed. The reaction cell includes a heater (18) surrounded by insulating layers and screens. Surrounding the anvils are cylindrical inserts and supporting rings (30-48) whose hardness increases towards the reaction cell. These volumes may be increased considerably if applications require it, making use of presses that have larger loading force capability, larger frames and using larger anvils.
REFERENCES:
patent: 2941248 (1960-06-01), Howard
patent: 3746484 (1973-07-01), Vereschagin et al.
patent: 6395214 (2002-05-01), Kear et al.
Botjer William L.
Diamond Materials, INC
Hiteshew Felisa
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