High precision ccd magnetic field sensor

Details High precision ccd magnetic field sensor High precision ccd magnetic field sensor

1992-03-16

1993-03-16

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257235, 257239, 257240, 257421, 257623, 377 60, 377 61, H01L 2978, G11C 1928

Patent

active

051947501

ABSTRACT:
A magnetic field sensor, having a charge-coupled device formed in a semiconductor region is disclosed. The magnetic field sensor has first and second contact zones, made of a heavily doped semiconductor material of a first conductivity type, located on an outer surface of the semiconductor region which is made of a semiconductor material of a second conductivity type. The magnetic field sensor also has an insulating layer, located on the outer surface of the semiconductor region, which has passages for sensor connections associated with each contact zone. The charge-coupled device has a plurality of gate electrodes located on the insulating layer which are arranged perpendicularly to the desired direction of charge propagation through the charge-coupled device. One end of at least one centrally located electrode at least partially overlaps the first contact zone while another end at least partially overlaps the second contact zone.

REFERENCES:
patent: 3906359 (1975-04-01), Blaha et al.
patent: 4801991 (1989-01-01), Hisa
patent: 5083174 (1992-01-01), Kub
Chang et al "Charge-Coupled Device Magnetic Field Sensor" IBM Technical Disclosure Bulletin vol. 14 (Apr. 1972) p. 3420.

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