High precision alignment system for microlithography

Details High precision alignment system for microlithography High precision alignment system for microlithography

1989-01-04

1991-02-12

Willis, Davis L.

Optics: measuring and testing

By particle light scattering

With photocell detection

356352, 356356, G01B 902

Patent

active

049919628

ABSTRACT:
This invention discloses a high-precision alignment system for aligning a mask with a wafer in a high-resolution microlithography system. This alignment system has a high-sensitivity mask-wafer displacement detection system characterized by an optical heterodyne technique that uses two laser frequencies to generate by diffraction and interference a displacement signal at a different frequency, and has a high-precision mask-wafer positioning system that uses a laser modulation spectroscopic technique characterized by controlling the cavity spacing of a highly stable optical resonator with a modulated frequency-stabilized laser, making it possible to align a wafer pattern with a mask pattern with a precision on the order of a few nanometers.

REFERENCES:
patent: 4332473 (1982-06-01), Ono
patent: 4631416 (1986-12-01), Trutna, Jr.
patent: 4838693 (1989-06-01), Uchida et al.
Jackson et al., "Confocal Fabry-Perot Sensor", Electronics Letters, vol. 18, No. 5, pp. 227-229, Mar. 1982.

Affiliated with

Also associated with

Rating

High precision alignment system for microlithography does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High precision alignment system for microlithography, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High precision alignment system for microlithography will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-17402