Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Encapsulated
Reexamination Certificate
2005-12-20
2005-12-20
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Encapsulated
C257S098000, C257S099000
Reexamination Certificate
active
06977396
ABSTRACT:
A light emitting device includes a first semiconductor layer of a first conductivity type, an active region, and a second semiconductor layer of a second conductivity type. First and second contacts are connected to the first and second semiconductor layers. In some embodiments at least one of the first and second contacts has a thickness greater than 3.5 microns. In some embodiments, a first heat extraction layer is connected to one of the first and second contacts. In some embodiments, one of the first and second contacts is connected to a submount by a solder interconnect having a length greater than a width. In some embodiments, an underfill is disposed between a submount and one of the first and second interconnects.
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European Search Report, 3 pages.
Martin Paul S.
Shen Yu-Chen
Steigerwald Daniel A.
Kang Donghee
Lumileds Lighting U.S. LLC
Patent Law Group LLP
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