High-powered light emitting device with improved thermal...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Encapsulated

Reexamination Certificate

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C257S098000, C257S099000

Reexamination Certificate

active

06977396

ABSTRACT:
A light emitting device includes a first semiconductor layer of a first conductivity type, an active region, and a second semiconductor layer of a second conductivity type. First and second contacts are connected to the first and second semiconductor layers. In some embodiments at least one of the first and second contacts has a thickness greater than 3.5 microns. In some embodiments, a first heat extraction layer is connected to one of the first and second contacts. In some embodiments, one of the first and second contacts is connected to a submount by a solder interconnect having a length greater than a width. In some embodiments, an underfill is disposed between a submount and one of the first and second interconnects.

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patent: 2004/0222434 (2004-11-01), Uemura et al.
patent: WO 02/05350 (2002-01-01), None
European Search Report, 3 pages.

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