High-power waveguide limiter comprising PIN diodes for millimete

Wave transmission lines and networks – Automatically controlled systems – Impedance matching

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333250, 357 55, 357 58, H01P 122

Patent

active

045715599

ABSTRACT:
A high-power limiter comprising silicon PIN diodes for millimeter waves is formed by a waveguide associated with a silicon substrate wherein is formed a matrix of PIN diodes. The PIN diodes are formed throughout the thickness of the silicon substrate.

REFERENCES:
patent: 3750055 (1973-07-01), Funck
Microwave Journal, vol. 22, No. 8, Aug. 1979, Dedham (US) E. P. Valkenburg et al.: pp. 59-64, FIG. 1.
Microwave Journal, vol. 26, No. 3, Mar. 1983, Dedham (US) A. Armstrong et al., pp. 65-72, FIG. 2.

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